2SA1853 transistor equivalent, pnp/npn epitaxial planar silicon transistor.
* Adoption of FBET process.
* High fT : fT=300MHz.
* High breakdown voltage : VCEO=200V.
* Small reverse transfer capacitance and excellent
high-frequency.
Applications
* High-definition CRT display video output. Wideband amplifier.
Features
* Adoption of FBET proces.
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